Transient Bending Vibration of a Piezoelectric Semiconductor Nanofiber Under a Suddenly Applied Shear Force

被引:38
作者
Liang, Yuxing [1 ]
Yang, Wanli [1 ]
Yang, Jiashi [2 ]
机构
[1] Huazhong Univ Sci & Technol, Dept Mech, Hubei Key Lab Engn Struct Anal & Safety Assessmen, Wuhan, Hubei, Peoples R China
[2] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
关键词
Piezoelectric; Semiconductor; Bending; Vibration; Transient; ELECTROMECHANICAL FIELDS; ANTIPLANE CRACK; ZNO NANOWIRE; PN JUNCTION; PERFORMANCE; NANOGENERATOR; PIEZOTRONICS; NANODEVICES;
D O I
10.1007/s10338-019-00109-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study transient bending vibration of a ZnO piezoelectric semiconductor nanofiber fixed at one end with a suddenly applied shear force at the other end. A one-dimensional model based on the phenomenological theory of piezoelectric semiconductors consisting of the equations of piezoelectricity coupled to the continuity equation of electrons is used. An approximate theoretical analysis is performed, accompanied by a finite element analysis using COMSOL. The evolutions of deflection, electric potential and electron distribution are calculated and examined. It is found that when the fiber reaches its largest deflection, the distributions of the electromechanical fields are qualitatively similar to those in the case of static loading under the same shear force, but the amplitudes of the fields are about twice as large roughly.
引用
收藏
页码:688 / 697
页数:10
相关论文
共 47 条
[1]   Piezo-Semiconductive Quasi-1D Nanodevices with or without Anti-Symmetry [J].
Araneo, Rodolfo ;
Lovat, Giampiero ;
Burghignoli, Paolo ;
Falconi, Christian .
ADVANCED MATERIALS, 2012, 24 (34) :4719-4724
[2]  
Auld BA, 1990, Acoustic fields and waves in solids
[3]   High-frequency acoustic charge transport in GaAs nanowires [J].
Buyukkose, S. ;
Hernandez-Minguez, A. ;
Vratzov, B. ;
Somaschini, C. ;
Geelhaar, L. ;
Riechert, H. ;
van der Wiel, W. G. ;
Santos, P. V. .
NANOTECHNOLOGY, 2014, 25 (13)
[4]   Mechanically Powered Transparent Flexible Charge-Generating Nanodevices with Piezoelectric ZnO Nanorods [J].
Choi, Min-Yeol ;
Choi, Dukhyun ;
Jin, Mi-Jin ;
Kim, Insoo ;
Kim, Song-Hyeob ;
Choi, Joe-Young ;
Lee, Song Yoon ;
Kim, Jong Min ;
Kim, Sang-Woo .
ADVANCED MATERIALS, 2009, 21 (21) :2185-+
[5]   Electric potential and carrier distribution in a piezoelectric semiconductor nanowire in time-harmonic bending vibration [J].
Dai, Xiaoyun ;
Zhu, Feng ;
Qian, Zhenghua ;
Yang, Jiashi .
NANO ENERGY, 2018, 43 :22-28
[6]   Piezoelectric-conductor iterative method for analysis of cracks in piezoelectric semiconductors via the finite element method [J].
Fan, CuiYing ;
Yan, Yang ;
Xu, GuangTao ;
Zhao, MingHao .
ENGINEERING FRACTURE MECHANICS, 2016, 165 :183-196
[7]   Adjustment and control on the fundamental characteristics of a piezoelectric PN junction by mechanical-loading [J].
Fan, Shuaiqi ;
Yang, Wanli ;
Hu, Yuantai .
NANO ENERGY, 2018, 52 :416-421
[8]   Exact solutions to the electromechanical quantities inside a statically-bent circular ZnO nanowire by taking into account both the piezoelectric property and the semiconducting performance: Part I-Linearized analysis [J].
Fan, Shuaiqi ;
Liang, Yuxing ;
Xie, Jiemin ;
Hu, Yuantai .
NANO ENERGY, 2017, 40 :82-87
[9]   Nanowire piezoelectric nanogenerators on plastic substrates as flexible power sources for nanodevices [J].
Gao, Pu Xian ;
Song, Jinhui ;
Liu, Jin ;
Wang, Zhong Lin .
ADVANCED MATERIALS, 2007, 19 (01) :67-+
[10]   Electrostatic potential in a bent piezoelectric nanowire. The fundamental theory of nanogenerator and nanopiezotronics [J].
Gao, Yifan ;
Wang, Zhong Lin .
NANO LETTERS, 2007, 7 (08) :2499-2505