Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films

被引：17

作者：

Jeon, Kiseok ^{[1
,2
]}

Shin, Seung Wook ^{[3
]}

Jo, Jaeseung ^{[1
,2
]}

Kim, Myung Sang ^{[4
]}

Shin, Jae Cheol ^{[5
]}

Jeong, Chaehwan ^{[6
]}

Lim, Jun Hyung ^{[7
]}

Song, Junho ^{[7
]}

Heo, Jaeyeong ^{[1
,2
]}

Kim, Jin Hyeok ^{[1
,2
]}

机构：

[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea

[2] Chonnam Natl Univ, Optoelect Convergence Res Ctr, Kwangju 500757, South Korea

[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[4] Korea Photon Technol & Inst, Kwangju 550779, South Korea

[5] Yeungnam Univ, Dept Phys, Gyeonbuk 712749, South Korea

[6] Korea Inst Ind Technol, Appl Opt & Energy Res Grp, Kwangju 500480, South Korea

[7] Samsung Display, Display Res Ctr, Yongin 446811, Kyeongi Do, South Korea

来源：

CURRENT APPLIED PHYSICS | 2014年 / 14卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

Amorphous oxide semiconductor; Indium gallium zinc oxide; Electron-beam irradiation; TRANSISTOR; ZN; GA;

D O I：

10.1016/j.cap.2014.08.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1591 / 1595

页数：5

共 26 条

[1] Charge carrier induced lattice strain and stress effects on As activation in Si [J].

Ahn, Chihak ;

Dunham, Scott T. .

APPLIED PHYSICS LETTERS, 2008, 93 (02)

[2] Electronic structure of amorphous InGaO3(ZnO)0.5 thin films [J].

Cho, Deok-Yong ;

Song, Jaewon ;

Hwang, Cheol Seong ;

Choi, Woo Seok ;

Noh, T. W. ;

Kim, J. -Y. ;

Lee, H. -G. ;

Park, B. -G. ;

Cho, S. -Y. ;

Oh, S. -J. ;

Jeong, Jong Han ;

Jeong, Jae Kyeong ;

Mo, Yeon-Gon .

THIN SOLID FILMS, 2009, 518 (04) :1079-1081

[3] Effect of Excimer Laser Annealing on the Performance of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors [J].

Du Ahn, Byung ;

Jeong, Woong Hee ;

Shin, Hyun Soo ;

Kim, Dong Lim ;

Kim, Hyun Jae ;

Jeong, Jae Kyeong ;

Choi, Sung-Hwan ;

Han, Min-Koo .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (12) :H430-H432

[4] Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors [J].

Fung, Tze-Ching ;

Chuang, Chiao-Shun ;

Nomura, Kenji ;

Shieh, Han-Ping David ;

Hosono, Hideo ;

Kanicki, Jerzy .

JOURNAL OF INFORMATION DISPLAY, 2008, 9 (04) :21-29

[5] A theoretical approach on the strain-induced dislocation effects in the quantum dot solar cells [J].

Gorji, Nima Eshaghi .

SOLAR ENERGY, 2012, 86 (03) :935-940

[6] The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays [J].

Jeong, Jae Kyeong .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (03)

[7] Properties of IGZO thin films irradiated by electron beams with various energies [J].

Jeong, So Hyun ;

Bae, Byung Seong ;

Yu, Kyeong Min ;

Ryu, Min Ki ;

Cho, Kyoung Ik ;

Yun, Eui-Jung .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61 (06) :867-872

[8] Present status of amorphous In-Ga-Zn-O thin-film transistors [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2010, 11 (04)

[9] SPINEL, YBFE2O4, AND YB2FE3O7 TYPES OF STRUCTURES FOR COMPOUNDS IN THE IN2O3 AND SC2O3-A2O3-BO SYSTEMS [A-FE, GA, OR AL-B-MG, MN, FE, NI, CU, OR ZN] AT TEMPERATURES OVER 1000-DEGREES-C [J].

KIMIZUKA, N ;

MOHRI, T .

JOURNAL OF SOLID STATE CHEMISTRY, 1985, 60 (03) :382-384

[10] Why shallow defect levels alone do not cause high resistivity in CdTe [J].

Krasikov, D. ;

Knizhnik, A. ;

Potapkin, B. ;

Sommerer, T. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (12)

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