Attempt to define conservative conditions for total dose evaluation of bipolar ICs

被引:18
作者
Bonora, L [1 ]
David, JP [1 ]
机构
[1] DERTS, CERT, ONERA, F-31055 Toulouse, France
关键词
D O I
10.1109/23.658972
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper investigates the influence of parameters such as temperature, dose rate and bias upon the degradation of irradiated bipolar commercial ICs (LM124 operational amplifiers and LM139 comparators). Results at 0.003 rad(Si)/s are included and compared with high dose rate irradiations at elevated temperature or combining an elevated temperature and a reverse bias applied to the supply pins of the device. The damage levels reached appear reasonably close to the data at very low dose rate for the tested devices. These preliminary results may contribute to the development of a hardness assurance test method.
引用
收藏
页码:1974 / 1980
页数:7
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