This paper investigates the influence of parameters such as temperature, dose rate and bias upon the degradation of irradiated bipolar commercial ICs (LM124 operational amplifiers and LM139 comparators). Results at 0.003 rad(Si)/s are included and compared with high dose rate irradiations at elevated temperature or combining an elevated temperature and a reverse bias applied to the supply pins of the device. The damage levels reached appear reasonably close to the data at very low dose rate for the tested devices. These preliminary results may contribute to the development of a hardness assurance test method.