Comparative characteristics of on-chip single- and double-level square inductors

被引:11
作者
Yin, WY [1 ]
Pan, SJ
Li, LW
机构
[1] Natl Univ Singapore, Temasek Labs, Singapore 119260, Singapore
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore
[3] Singapore MIT Alliance, Dept Elect & Comp Engn, High Performance Computat Engn Syst Program, Singapore 119260, Singapore
关键词
inductance; on-chip single-level (SL) and double-level; (DL) square inductors; Q factor; resonance frequency;
D O I
10.1109/TMAG.2003.809860
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Detailed experimental investigations reported in this paper have determined the inductances, Q factors, and resonance frequencies of on-chip square, single-level (SL) and double-level (DL) inductors on silicon substrates, using the equivalent circuit model and the measured S parameters. Parametric studies show the effects of both strip length and inner empty area on the coupling capacitance and resonance frequency. Some scalable formulas are derived for extrapolating inductance and resonance frequency of other inductors. In the DL chips, very strong self-resonance can take place with lower resonance frequency, and the Q factor will be degraded rapidly.
引用
收藏
页码:1778 / 1783
页数:6
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