High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics

被引：37

作者：

Xu, Mingkun ^{[1
,2
,3
]}

Wang, Jimmy ^{[1
,2
]}

Xue, Zhaoguo ^{[1
,2
]}

Wang, Junzhuan ^{[1
,2
]}

Feng, Ping ^{[1
,2
]}

Yu, Linwei ^{[1
,2
,4
]}

Xu, Jun ^{[1
,2
]}

Shi, Yi ^{[1
,2
]}

Chen, Kunji ^{[1
,2
]}

Roca i Cabarrocas, Pere ^{[4
]}

机构：

[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[3] Chaohu Univ, Coll Mech & Elect Engn, Chaohu, Peoples R China

[4] Univ Paris Saclay, CNRS, Ecole Polytech, LPICM, F-91128 Palaiseau, France

来源：

NANOSCALE | 2017年 / 9卷 / 29期

基金：

中国国家自然科学基金;

关键词：

THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; AMORPHOUS-SILICON; GROWTH; FABRICATION; DISPLAYS; ARRAYS; TIN;

D O I：

10.1039/c7nr02825c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High mobility, scalable and even transparent thin-film transistors (TFTs) are always being pursued in the field of large area electronics. While excimer laser-beam-scanning can crystallize amorphous Si (a-Si) into high mobility poly-Si, it is limited to small areas. We here demonstrate a robust nano-droplet-scanning strategy that converts an a-Si: H thin film directly into periodic poly-Si nano-channels, with the aid of well-coordinated indium droplets. This enables the robust batch-fabrication of high performance Fin-TFTs with a high hole mobility of >100 cm(2) V-1 s(-1) and an excellent subthreshold swing of only 163 mV dec(-1), via a low temperature <350 degrees C thin film process. More importantly, precise integration of tiny polySi channels, measuring only 60 nm in diameter and 2 mu m apart on glass substrates, provides an unprecedented transparent Si-based TFT technology to visible light, which is widely sought for the next generation of high aperture displays and fully transparent electronics. The successful implementation of such a reliable nano-droplet-scanning strategy, rooted in the strength of nanoscale growth dynamics, will enable eventually the batch-manufacturing and upgrade of high performance large area electronics in general, and high definition and scalable flat-panel displays in particular.

引用

页码：10350 / 10357

页数：8

共 45 条

[1] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].