Wafer level bonding using localized radio-frequency induction heating

被引：2
|
作者：
Chen MingXiang [1 ,2 ]
Liu WenMing [1 ,2 ]
Xi YanYan [1 ,2 ]
Lin ChangYong [1 ,2 ]
Liu Sheng [1 ,2 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, Wuhan 430074, Peoples R China
[2] Wuhan Natl Lab Optoelect, Div MOEMS, Wuhan 430074, Peoples R China
来源：
SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2010年 / 53卷 / 05期
基金：
中国国家自然科学基金;
关键词：
wafer bonding; induction heating; MEMS; MEMS packaging; THERMAL RUNAWAY;
D O I：
10.1007/s11431-010-0006-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A wafer level bonding technique by localized induction heating has been developed and demonstrated in this paper. A suitable fabrication process scheme has also been established for the localized induction heating and bonding. It takes only about 20 seconds to complete the bonding process. The temperatures of solder loops and the central area of solder loops are above 300 degrees C and below 70 degrees C, respectively. Due to the solder reflow, robust and hermetic glass wafer bonding is accomplished, and the average tensile strength is 6.42 MPa. Under- heated or over-heated bonding has been found to result in cracks at bonding interfaces and sputtering layer, which degrades the bonding qualities.
引用
收藏
页码：1252 / 1257
页数：6
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