In situ scanning electron microscopy of graphene nucleation during segregation of carbon on polycrystalline Ni substrate

被引:10
作者
Momiuchi, Yuta [1 ]
Yamada, Kazuki [1 ]
Kato, Hiroki [1 ]
Homma, Yoshikazu [1 ]
Hibino, Hiroki [2 ]
Odahara, Genki [3 ]
Oshima, Chuhei [3 ]
机构
[1] Tokyo Univ Sci, Dept Phys, Shinjuku Ku, Tokyo 1628601, Japan
[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[3] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1690072, Japan
关键词
graphene; nickel; scanning electron microscopy; segregation; in situ observation; MONOLAYER GRAPHITE; NI(111); SURFACE; GROWTH; NICKEL;
D O I
10.1088/0022-3727/47/45/455301
中图分类号
O59 [应用物理学];
学科分类号
摘要
In situ scanning electron microscopy (SEM) was used for observing the nucleation of graphene by segregation of bulk-dissolved carbon on a flat polycrystalline nickel surface. Preferential nucleation sites were determined on large (1 1 1) grains. In combination with ex situ atomic force microscopy measurements at the same area as with SEM, the nucleation sites were found to have step-bunched structures. Possible nucleation mechanisms are discussed based on the difference in the carbon concentration and critical nucleus size between the (1 1 1) terrace and step bunches.
引用
收藏
页数:5
相关论文
共 21 条
  • [1] Catalytic Growth of Graphene: Toward Large-Area Single-Crystalline Graphene
    Ago, Hiroki
    Ogawa, Yui
    Tsuji, Masaharu
    Mizuno, Seigi
    Hibino, Hiroki
    [J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2012, 3 (16): : 2228 - 2236
  • [2] Growth of graphene on Ir(111)
    Coraux, Johann
    N'Diaye, Alpha T.
    Engler, Martin
    Busse, Carsten
    Wall, Dirk
    Buckanie, Niemma
    Heringdorf, Frank-j Meyer Zu
    van Gastel, Raoul
    Poelsema, Bene
    Michely, Thomas
    [J]. NEW JOURNAL OF PHYSICS, 2009, 11
  • [3] EIZENBERG M, 1979, SURF SCI, V82, P228, DOI 10.1016/0039-6028(79)90330-3
  • [4] Atomic structure of monolayer graphite formed on Ni(111)
    Gamo, Y
    Nagashima, A
    Wakabayashi, M
    Terai, M
    Oshima, C
    [J]. SURFACE SCIENCE, 1997, 374 (1-3) : 61 - 64
  • [5] The rise of graphene
    Geim, A. K.
    Novoselov, K. S.
    [J]. NATURE MATERIALS, 2007, 6 (03) : 183 - 191
  • [6] Epitaxial few-layer graphene: towards single crystal growth
    Hibino, H.
    Kageshima, H.
    Nagase, M.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (37)
  • [7] Determination of the Number of Graphene Layers: Discrete Distribution of the Secondary Electron Intensity Stemming from Individual Graphene Layers
    Hiura, Hidefumi
    Miyazaki, Hisao
    Tsukagoshi, Kazuhito
    [J]. APPLIED PHYSICS EXPRESS, 2010, 3 (09)
  • [8] SECONDARY-ELECTRON IMAGING OF MONOLAYER STEPS ON A CLEAN SI(111) SURFACE
    HOMMA, Y
    TOMITA, M
    HAYASHI, T
    [J]. SURFACE SCIENCE, 1991, 258 (1-3) : 147 - 152
  • [9] Homma Y, 2011, THIN FILM GROWTH: PHYSICS, MATERIALS SCIENCE AND APPLICATIONS, P3
  • [10] ATOMIC STEP IMAGING ON SILICON SURFACES BY SCANNING ELECTRON-MICROSCOPY
    HOMMA, Y
    TOMITA, M
    HAYASHI, T
    [J]. ULTRAMICROSCOPY, 1993, 52 (02) : 187 - 192