Low-temperature silicon epitaxy on hydrogen-terminated Si(001) surfaces

被引：15
|
作者：
Ji, JY [1 ]
Shen, TC [1 ]
机构：
[1] Utah State Univ, Dept Phys, Logan, UT 84322 USA
来源：
PHYSICAL REVIEW B | 2004年 / 70卷 / 11期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1103/PhysRevB.70.115309
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Si deposition on H terminated Si(001)-2x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed. Hydrogen is shown to remain on the growth front up to at least 10 ML. Si deposition onto the H/Si(001)-3x1 surface at 530 K suggests that dihydride units further suppress Si adatom diffusion and increase surface roughness.
引用
收藏
页码：115309 / 1
页数：6
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