Low-temperature silicon epitaxy on hydrogen-terminated Si(001) surfaces

被引：15

作者：

Ji, JY ^{[1
]}

Shen, TC ^{[1
]}

机构：

[1] Utah State Univ, Dept Phys, Logan, UT 84322 USA

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.70.115309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si deposition on H terminated Si(001)-2x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed. Hydrogen is shown to remain on the growth front up to at least 10 ML. Si deposition onto the H/Si(001)-3x1 surface at 530 K suggests that dihydride units further suppress Si adatom diffusion and increase surface roughness.

引用

页码：115309 / 1

页数：6

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