Heteroepitaxial TiN of very low mosaic spread on Al2O3

被引：16

作者：

Chen, WC ^{[1
]}

Lin, YR

Guo, XJ

Wu, ST

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

[2] Natl Tsing Hua Univ, Dept Chem, Hsinchu 30043, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 01期

关键词：

reactive magnetron sputtering; titanium nitride; heteroepitaxy; pole figure; lattice mismatch;

D O I：

10.1143/JJAP.42.208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of a titanium nitride film on sapphire is achieved at room temperature by means of reactive sputtering. An exceptionally low full-width at half maximum (FWHM) from the X-ray rocking curve of 0.07degrees (252 arcsec) is measured for the film grown at 600degreesC with a thickness of 50 nm.

引用

页码：208 / 212

页数：5

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