Effects of H+ ion implantation and annealing on the properties of CuIn0.75Ga0.25Se2 thin films

被引:2
作者
Ahmed, E.
Pilkington, R. D.
Hill, A. E.
Amar, M.
Ahmed, W.
Taylor, H.
Jackson, M. J.
机构
[1] Purdue Univ, Birck Nanotechnol Ctr, Coll Technol, W Lafayette, IN 47907 USA
[2] Uni Ulster, Nanotechnol Res Inst, Ulsan BT37 0QB, South Korea
[3] Univ Salford, Dept Phys, Salford M5 4WT, Lancs, England
[4] Bahauddin Zakariya Univ, Dept Phys, Multan, Pakistan
关键词
solar cells; copper alloys; thin films; heat treatment; spectroscopy; electrical conductivity;
D O I
10.1007/s11665-006-9019-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper the effects of post-deposition annealing followed by hydrogen ion-implantation on the properties of CuIn0.75Ga0.25Se2 thin films have been investigated. The samples were grown by flash evaporation onto glass substrates heated at temperature between room temperature and 200 degrees C. Selected samples were subsequently processed under several sets of conditions, including vacuum, selenium, inert (argon) and forming gas (a 9:1 mixture of N-2:H-2) followed by hydrogen ion-implantation. A high-resolution near-infrared photoacoustic spectrometer (PAS) of the gas-microphone type was used for room temperature analysis of non-radiative defect levels in the as-grown, annealed and hydrogen implanted thin films. The absorption coefficient has been derived from the PA spectra to determine the gap energy and to establish the activation energies for several defect-related energy levels. The changes observed in the PA spectra following annealing and ion-implantation has been directly correlated with the compositional and structural properties of the samples.
引用
收藏
页码:119 / 122
页数:4
相关论文
共 10 条
  • [1] AHMED E, 1995, THESIS U SALFORD UK
  • [2] PULSED-LASER ABLATION DEPOSITION OF CUINSE2 AND CUIN1-XGAXSE2 THIN-FILMS
    LEVOSKA, J
    LEPPAVUORI, S
    WANG, F
    KUSMARTSEVA, O
    HILL, AE
    AHMED, E
    TOMLINSON, RD
    PILKINGTON, RD
    [J]. PHYSICA SCRIPTA, 1994, 54 : 244 - 247
  • [3] RELATION BETWEEN ELECTRICAL-PROPERTIES AND COMPOSITION IN CUINSE2 SINGLE-CRYSTALS
    NEUMANN, H
    TOMLINSON, RD
    [J]. SOLAR CELLS, 1990, 28 (04): : 301 - 313
  • [4] PANKOVE JI, 1996, HYDROGEN SEMICONDUCT
  • [5] Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells
    Ramanathan, K
    Contreras, MA
    Perkins, CL
    Asher, S
    Hasoon, FS
    Keane, J
    Young, D
    Romero, M
    Metzger, W
    Noufi, R
    Ward, J
    Duda, A
    [J]. PROGRESS IN PHOTOVOLTAICS, 2003, 11 (04): : 225 - 230
  • [6] Rau U, 2003, PRACTICAL HANDBOOK OF PHOTOVOLTAICS: FUNDAMENTALS AND APPLICATIONS, P367, DOI 10.1016/B978-185617390-2/50016-7
  • [7] Sze S. M., 1983, VLSI Technology
  • [8] INFLUENCE OF PROTON IMPLANTATION ON THE PROPERTIES OF CUINSE2 SINGLE-CRYSTALS (II)
    YAKUSHEV, MV
    NEUMANN, H
    TOMLINSON, RD
    RIMMER, P
    LIPPOLD, G
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1994, 29 (03) : 417 - 426
  • [9] A PHOTOACOUSTIC SPECTROMETER FOR MEASURING SUBGAP ABSORPTION-SPECTRA OF SEMICONDUCTORS
    ZEGADI, A
    SLIFKIN, MA
    TOMLINSON, RD
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1994, 65 (07) : 2238 - 2243
  • [10] PHOTOACOUSTIC-SPECTROSCOPY OF DEFECT STATES IN CUINSE2 SINGLE-CRYSTALS
    ZEGADI, A
    SLIFKIN, MA
    DJAMIN, M
    TOMLINSON, RD
    NEUMANN, H
    [J]. SOLID STATE COMMUNICATIONS, 1992, 83 (08) : 587 - 591