Impact of Equivalent Oxide Thickness on Threshold Voltage Variation Induced by Work-Function Variation in Multigate Devices

D O I：

10.1109/TED.2017.2673859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using 3-D technology computer aided design simulation, we investigated the impact of equivalent oxide thickness (EOT) on threshold voltage (V-TH) variation induced by work-function variation (WFV) in multigate devices. The WFV-induced VTH variation in multigate devices does not significantly vary with the dielectric constant of the gate dielectric material, but increases with decreasingphysicaloxide thickness(T-OX). As T-OX becomes thinner, electric field tends to be locally concentrated, causing a large variation of electrostatic potential in channel. The slope of the ratio of average grain size to gate area (RGG) plot is observed with various oxide thicknesses. It is confirmed that we can alleviate the WFV-induced VTH variation without significant performance degradation if gate dielectric layer becomes thicker with appropriately adopted higher-k engineering. In addition, the impact of EOT (including interface layer) on the WFV-induced VTH variation is studied.

引用

页码：2452 / 2456

页数：5

共 21 条

[1] On the scalability of doped hafnia thin films [J].

Adelmann, C. ;

Schram, T. ;

Chew, S. -A. ;

Woicik, J. C. ;

Brizzi, S. ;

Tallarida, M. ;

Schmeisser, D. ;

Horiguchi, N. ;

Van Elshocht, S. ;

Ragnarsson, L. -A. .

APPLIED PHYSICS LETTERS, 2014, 104 (12)

[2] Interdiffusion and crystallization in HfO2/Al2O3 superlattices [J].

Adelmann, C. ;

Kesters, J. ;

Opsomer, K. ;

Detavernier, C. ;

Kittl, J. A. ;

Van Elshocht, S. .

APPLIED PHYSICS LETTERS, 2009, 95 (09)

[3]

[Anonymous], SENT DEV US GUID VER

[4]

[Anonymous], 2008, IEDM, DOI DOI 10.1109/IEDM.2008.4796707

[5] Investigation and Comparison of Work Function Variation for FinFET and UTB SOI Devices Using a Voronoi Approach [J].

Chou, Shao-Heng ;

Fan, Ming-Long ;

Su, Pin .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (04) :1485-1489

[6] Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors-Part I: Modeling, Analysis, and Experimental Validation [J].

Dadgour, Hamed F. ;

Endo, Kazuhiko ;

De, Vivek K. ;

Banerjee, Kaustav .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (10) :2504-2514

[7]

Datta S, 2003, IEDM

[8] Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study [J].

Maitra, Kingsuk ;

Frank, Martin M. ;

Narayanan, Vijay ;

Misra, Veena ;

Cartier, Eduard A. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (11)

[9]

Migita S., 2008, 2008 Symposium on VLSI Technology, P152, DOI 10.1109/VLSIT.2008.4588599

[10] A 45nm logic technology with high-k plus metal gate transistors, strained silicon, 9 Cu interconnect layers, 193nm dry patterning, and 100% Pb-free packaging [J].

Mistry, K. ;

Allen, C. ;

Auth, C. ;

Beattie, B. ;

Bergstrom, D. ;

Bost, M. ;

Brazier, M. ;

Buehler, M. ;

Cappellani, A. ;

Chau, R. ;

Choi, C. -H. ;

Ding, G. ;

Fischer, K. ;

Ghani, T. ;

Grover, R. ;

Han, W. ;

Hanken, D. ;

Hatttendorf, M. ;

He, J. ;

Hicks, J. ;

Huessner, R. ;

Ingerly, D. ;

Jain, P. ;

James, R. ;

Jong, L. ;

Joshi, S. ;

Kenyon, C. ;

Kuhn, K. ;

Lee, K. ;

Liu, H. ;

Maiz, J. ;

McIntyre, B. ;

Moon, P. ;

Neirynck, J. ;

Pei, S. ;

Parker, C. ;

Parsons, D. ;

Prasad, C. ;

Pipes, L. ;

Prince, M. ;

Ranade, P. ;

Reynolds, T. ;

Sandford, J. ;

Schifren, L. ;

Sebastian, J. ;

Seiple, J. ;

Simon, D. ;

Sivakumar, S. ;

Smith, P. ;

Thomas, C. .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :247-+

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