Velocity overshoot analysis in SiGe and SiGeCHBT

被引：0
|
作者：
Li, Y. [1 ]
Cai, R. [1 ]
机构：
[1] Univ Sci & Technol China, Microelect Lab, Dept Phys, Anhua 230026, Peoples R China
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 2007年 / 94卷 / 6-8期
关键词：
velocity overshoot; SiGeHBT; SiGeCHBT; electron temperature;
D O I：
10.1080/00207210701292860
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A velocity overshoot model of ultra-thin-base SiGe and SiGeC HBT is obtained. By deriving the Boltzmann electron temperature equation, 3000K maxima near the collector-base junction of temperatures are found. Velocities distribution solutions considering velocity overshoot are achieved. Conclusions are that different germanium content percentage decides the maxima of overshoot velocities and base overshoot is observed. SiGeC HBT possesses approximately the same velocities as in SiGe HBT.
引用
收藏
页码：563 / 571
页数：9
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