Analysis and simulation of spectral regrowth in radio frequency power amplifiers

被引：6

作者：

Baytekin, B ^{[1
]}

Meyer, RG

机构：

[1] Sequoia Commun, San Diego, CA 92127 USA

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Elect Res Lab, Berkeley, CA 94720 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 02期

关键词：

adjacent channel power ratio (ACPR); distortion; forward transit time; power amplifiers; spectral regrowth; Volterra series;

D O I：

10.1109/JSSC.2004.840968

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a novel method for efficiently analyzing the relationship between spectral regrowth and physical distortion mechanisms in radio frequency power amplifiers. It utilizes a Volterra series model whose coefficients are computed from basic SPICE parameters The analysis uses a decomposition,of the Volterra kernels into simpler subsystems in order to greatly reduce the computation times. The method is applied to the design of several bipolar-transistor power amplifiers after a series-based model is developed for representing the increase in active device forward transit time at high collector current densities. A number of single-stage SiGe power amplifiers have been designed, fabricated, and tested using the IEEE802.11b and IS-95 modulation schemes at different carrier frequencies, and these results are. compared with the theoretical analysis.

引用

页码：370 / 381

页数：12

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