Single-etch subwavelength engineered fiber-chip grating couplers for 1.3 μm datacom wavelength band

被引:36
作者
Benedikovic, Daniel [1 ]
Alonso-Ramos, Carlos [1 ]
Cheben, Pavel [2 ]
Schmid, Jens H. [2 ]
Wang, Shurui [2 ]
Halir, Robert [3 ]
Ortega-Monux, Alejandro [3 ]
Xu, Dan-Xia [2 ]
Vivien, Laurent [1 ]
Lapointe, Jean [2 ]
Janz, Siegfried [2 ]
Dado, Milan [4 ]
机构
[1] Univ Paris Saclay, Univ Paris 11, Inst Elect Fondamentale, CNRS,UMR8622, Bat 220, Orsay, France
[2] Natl Res Council Canada, Informat & Commun Technol, 1200 Montreal Rd, Ottawa, ON K1A 0R6, Canada
[3] Univ Malaga, ETSI Telecomunicac, Dept Ingn Comunicac, Malaga 29010, Spain
[4] Univ Zilina, Fac Elect Engn, Dept Telecommun & Multimedia, Univ 8215-1, Zilina 01026, Slovakia
基金
欧洲研究理事会;
关键词
INSULATOR WAVE-GUIDES; INTERLEAVED TRENCHES; EFFICIENCY;
D O I
10.1364/OE.24.012893
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report, for the first time, on the design and experimental demonstration of fiber-chip surface grating couplers based on subwavelength grating engineered nanostructure operating in the low fiber chromatic dispersion window (around 1.3 mu m wavelengths), which is of great interest for short-reach data communication applications. Our coupler designs meet the minimum feature size requirements of large-volume deep-ultraviolet stepper lithography processes. The fiber-chip couplers are implemented in a standard 220-nm-thick silicon-on-insulator (SOI) platform and are fabricated by using a single etch process. Several types of couplers are presented, specifically the uniform, the apodized, and the focusing designs. The measured peak coupling efficiency is -2.5 dB (56%) near the central wavelength of 1.3 mu m. In addition, by utilizing the technique of the backside substrate metallization underneath the grating couplers, the coupling efficiency of up to -0.5 dB (89%) is predicted by Finite Difference Time Domain (FDTD) calculations. (C) 2016 Optical Society of America
引用
收藏
页码:12893 / 12904
页数:12
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