High-Performance Plasmonic THz Detector Based on Asymmetric FET With Vertically Integrated Antenna in CMOS Technology

被引：45

作者：

Ryu, Min Woo ^{[1
]}

Lee, Jeong Seop ^{[1
]}

Kim, Kwan Sung ^{[1
]}

Park, Kibog ^{[1
]}

Yang, Jong-Ryul ^{[2
]}

Han, Seong-Tae ^{[2
]}

Kim, Kyung Rok ^{[1
]}

机构：

[1] Ulsan Natl Inst Sci & Technol, Sch Elect & Comp Engn, Ulsan 689798, South Korea

[2] Korea Electrotechnol Res Inst, Ansan 426910, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Asymmetric FET; CMOS; noise-equivalent power (NEP); plasmonic terahertz (THz) detector; responsivity; self-aligned; FOCAL-PLANE ARRAY; TERAHERTZ RADIATION; SUB-TERAHERTZ;

D O I：

10.1109/TED.2016.2526677

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a high-performance plasmonic terahertz (THz) detector based on an antenna-coupled asymmetric FET by using the 65-nm CMOS technology. By designing an asymmetric FET on a self-aligned poly-Si gate structure, more enhanced channel charge asymmetry between the source and the drain has been obtained in comparison with the nonself-aligned metal gate structure of our previous paper. In addition, using a vertically integrated patch antenna, which is designed for a 0.2-THz resonance frequency, we demonstrated the highly enhanced detection performance with a responsivity of 1.5 kV/W and a noise-equivalent power of 15 pW/Hz(0.5) at 0.2 THz.

引用

页码：1742 / 1748

页数：7

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