High-Performance Plasmonic THz Detector Based on Asymmetric FET With Vertically Integrated Antenna in CMOS Technology

被引：43
|
作者：
Ryu, Min Woo [1 ]
Lee, Jeong Seop [1 ]
Kim, Kwan Sung [1 ]
Park, Kibog [1 ]
Yang, Jong-Ryul [2 ]
Han, Seong-Tae [2 ]
Kim, Kyung Rok [1 ]
机构：
[1] Ulsan Natl Inst Sci & Technol, Sch Elect & Comp Engn, Ulsan 689798, South Korea
[2] Korea Electrotechnol Res Inst, Ansan 426910, South Korea
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
Asymmetric FET; CMOS; noise-equivalent power (NEP); plasmonic terahertz (THz) detector; responsivity; self-aligned; FOCAL-PLANE ARRAY; TERAHERTZ RADIATION; SUB-TERAHERTZ;
D O I：
10.1109/TED.2016.2526677
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a high-performance plasmonic terahertz (THz) detector based on an antenna-coupled asymmetric FET by using the 65-nm CMOS technology. By designing an asymmetric FET on a self-aligned poly-Si gate structure, more enhanced channel charge asymmetry between the source and the drain has been obtained in comparison with the nonself-aligned metal gate structure of our previous paper. In addition, using a vertically integrated patch antenna, which is designed for a 0.2-THz resonance frequency, we demonstrated the highly enhanced detection performance with a responsivity of 1.5 kV/W and a noise-equivalent power of 15 pW/Hz(0.5) at 0.2 THz.
引用
收藏
页码：1742 / 1748
页数：7
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