Thermal annealing effect on properties of Zn thin films deposited on Si (111) substrates by dc sputtering

被引：0
作者：
Chuah, L. S. [1 ]
Hassan, Z. [2 ]
Tneh, S. S. [2 ]
机构：
[1] Univ Sains Malaysia, Phys Sect, Sch Distance Educ, Minden 11800, Penang, Malaysia
[2] Univ Sains Malaysia, Sch Phys, Minden 11800, Penang, Malaysia
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2010年 / 4卷 / 04期
关键词：
Annealing; Si(111); PL; XRD; ZnO thin films; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; OXYGEN;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zn films were deposited on silicon (111) by dc sputtering deposition technology from high purity Zn targets with a purity of 99.99 %. Then, annealing of Zn films was performed in air for 1 hour at 800 C. The effects of annealing on the structural and optical properties of ZnO thin films on Si(111) substrates were investigated using atomic force microscopy (AFM), X-ray diffraction (XRD), and photoluminescence (PL) measurements. XRD patterns and AFM showed that the annealed ZnO films grown on Si(111) substrates have c-axis preferential orientation, the crystallinity of the ZnO films grown on Si (111) substrates was improved, and the grain size increased by thermal annealing. PL spectra is clearly visible at 382 nm for ZnO film grown on Si(111) substrates.
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页码：502 / 504
页数：3
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