IR photodetectors based on MBE grown MCT layers

被引：2
|
作者：
Vasilyev, VV [1 ]
Ovsyuk, VN [1 ]
Sidorov, YG [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
SIXTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | 2003年 / 5065卷
关键词：
D O I：
10.1117/12.502164
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A complete technological cycle has been designed to produce photodetector arrays, which involves MBE growth of Hg1-xCdxTe (MCT) heteroepitaxial layers, fabrication of MCT-based photodetector structures, manufacture of silicon array multiplexers and hybrid assembly of a photodetector module consisting of a photodetector and multiplexer by means of indium micro bumps. Photoelectric parameters are given of photodetector array modules on the basis of photodiodes for the middle (3-3.5 mum) and far (8-12 mum) infrared ranges, operating at 78-80 K and 200-220 K temperatures.
引用
收藏
页码：39 / 46
页数：8
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