Three-dimensionally confined excitons in MOCVD-grown ultrathin CdSe depositions in ZnSSe matrix

被引：10

作者：

Engelhardt, R ^{[1
]}

Turck, V

Pohl, UW

Bimberg, D

Veit, P

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Otto Von Guericke Univ, Inst Phys Expt, D-39016 Magdeburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

CdSe/ZnSSe; quantum dots; MOCVD; cathodoluminescence;

D O I：

10.1016/S0022-0248(98)80066-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Up to 3 monolayer (ML) thick highly strained CdSe insertions in lattice matched ZnSSe/GaAs were grown by metalorganic chemical vapor deposition (MOCVD). The samples show a bright photoluminescence band near the barrier band edge exhibiting a strong red shift with increasing CdSe deposition. The assignment to recombinations of three-dimensionally confined excitons is confirmed by cathodoluminescence. An additional-low energy band appearing for thicker CdSe depositions is attributed to defects. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：311 / 314

页数：4

共 11 条

[1] SCANNING CATHODOLUMINESCENCE MICROSCOPY - A UNIQUE APPROACH TO ATOMIC-SCALE CHARACTERIZATION OF HETEROINTERFACES AND IMAGING OF SEMICONDUCTOR INHOMOGENEITIES [J].

CHRISTEN, J ;

GRUNDMANN, M ;

BIMBERG, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2358-2368

[2]

Flack FS, 1996, MATER RES SOC SYMP P, V417, P169

[3] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS [J].

GRUNDMANN, M ;

CHRISTEN, J ;

LEDENTSOV, NN ;

BOHRER, J ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

RICHTER, U ;

GOSELE, U ;

HEYDENREICH, J ;

USTINOV, VM ;

EGOROV, AY ;

ZHUKOV, AE ;

KOPEV, PS ;

ALFEROV, ZI .

PHYSICAL REVIEW LETTERS, 1995, 74 (20) :4043-4046

[4] Self-organized CdSe quantum dots onto cleaved GaAs(110) originating from Stranski-Krastanow growth mode [J].

Ko, HC ;

Park, DC ;

Kawakami, Y ;

Fujita, S ;

Fujita, S .

APPLIED PHYSICS LETTERS, 1997, 70 (24) :3278-3280

[5] RT lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattices [J].

Krestnikov, IL ;

Maximov, MV ;

Sakharov, AV ;

Kop'ev, PS ;

Alferov, ZI ;

Ledentsov, NN ;

Bimberg, D ;

Torres, CMS .

JOURNAL OF CRYSTAL GROWTH, 1998, 184 :545-549

[6] Laterally structured ZnCdSe/ZnSe superlattices by diffusion induced disordering [J].

Kuttler, M ;

Strassburg, M ;

Turck, V ;

Heitz, R ;

Pohl, UW ;

Bimberg, D ;

Kurtz, E ;

Landwehr, G ;

Hommel, D .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2647-2649

[7] Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix [J].

Ledentsov, NN ;

Krestnikov, IL ;

Maximov, MV ;

Ivanov, SV ;

Sorokin, SL ;

Kopev, PS ;

Alferov, ZI ;

Bimberg, D ;

Torres, CMS .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1343-1345

[8] Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing [J].

Ledentsov, NN ;

Grundmann, M ;

Kirstaedter, N ;

Schmidt, O ;

Heitz, R ;

Bohrer, J ;

Bimberg, D ;

Ustinov, VM ;

Shchukin, VA ;

Egorov, AY ;

Zhukov, AE ;

Zaitsev, S ;

KopEv, PS ;

Alferov, ZI ;

Ruvimov, SS ;

Kosogov, AO ;

Werner, P ;

Gosele, U ;

Heydenreich, J .

SOLID-STATE ELECTRONICS, 1996, 40 (1-8) :785-798

[9]

LOWISCH M, 1996, PHYS REV B, V54, P54

[10] Formation of self-assembling CdSe quantum dots on ZnSe by molecular beam epitaxy [J].

Xin, SH ;

Wang, PD ;

Yin, A ;

Kim, C ;

Dobrowolska, M ;

Merz, JL ;

Furdyna, JK .

APPLIED PHYSICS LETTERS, 1996, 69 (25) :3884-3886

← 1 2 →