Negative-electron-affinity effect on the surface of chemical-vapor-deposited diamond polycrystalline films

被引：59
作者：
Krainsky, IL
Asnin, VM
Mearini, GT
Dayton, JA
机构：
[1] NASA Lewis Research Center, Cleveland
来源：
PHYSICAL REVIEW B | 1996年 / 53卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.53.R7650
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Strong negative-electron-affinity effects have been observed on the surface of as-grown chemical-vapor-deposited diamond using secondary-electron emission. The samples were randomly oriented polycrystalline diamond films terminated with hydrogen. The effect appears as an intensive peak in the low-energy part of the spectrum of the electron energy distribution and may be described in the model of effective negative electron affinity.
引用
收藏
页码：R7650 / R7653
页数：4
相关论文
共 50 条
  • [21] EFFECT OF DEPOSITION CONDITIONS ON THE TEXTURE AND SUBSTRUCTURE OF CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS
    GORELIK, SS
    SAGALOVA, TB
    SAFONOV, YS
    SULTANOV, MA
    INORGANIC MATERIALS, 1994, 30 (03) : 298 - 301
  • [22] Field-emission activation on boron-doped chemical-vapor-deposited polycrystalline diamond films
    Kim, YD
    Choi, W
    Wang, CH
    Ando, T
    Jeon, H
    Chang, SY
    Tomokage, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (5A): : 3081 - 3084
  • [23] Field-emission activation on boron-doped chemical-vapor-deposited polycrystalline diamond films
    Tomokage, H. (tomokage@guppy.tl.fukuoka-u.ac.jp), 1600, Japan Society of Applied Physics (41):
  • [24] THE THERMAL-CONDUCTIVITY OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS ON SILICON
    GRAEBNER, JE
    MUCHA, JA
    SEIBLES, L
    KAMMLOTT, GW
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) : 3143 - 3146
  • [25] TANTALUM NITRIDE FILMS AS RESISTORS ON CHEMICAL-VAPOR-DEPOSITED DIAMOND SUBSTRATES
    KATZ, A
    PEARTON, SJ
    NAKAHARA, S
    BAIOCCHI, FA
    LANE, E
    KOVALCHICK, J
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) : 5208 - 5212
  • [26] Stress-relief behavior in chemical-vapor-deposited diamond films
    Fan, QH
    Fernandes, A
    Pereira, E
    Gracio, J
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (06) : 3155 - 3158
  • [27] THICKNESS DEPENDENCE OF THE ELECTRICAL CHARACTERISTICS OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS
    PLANO, MA
    ZHAO, S
    GARDINIER, CF
    LANDSTRASS, MI
    KANIA, DR
    KAGAN, H
    GAN, KK
    KASS, R
    PAN, LS
    HAN, S
    SCHNETZER, S
    STONE, R
    APPLIED PHYSICS LETTERS, 1994, 64 (02) : 193 - 195
  • [28] NITROGEN STABILIZED (100) TEXTURE IN CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS
    LOCHER, R
    WILD, C
    HERRES, N
    BEHR, D
    KOIDL, P
    APPLIED PHYSICS LETTERS, 1994, 65 (01) : 34 - 36
  • [29] Grain boundary effects on carrier transport in undoped polycrystalline chemical-vapor-deposited diamond
    Han, S
    Wagner, RS
    APPLIED PHYSICS LETTERS, 1996, 68 (21) : 3016 - 3018
  • [30] INFLUENCE OF ANNEALING ON THE RESISTANCE OF POLYCRYSTALLINE CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS - A SURFACE CHEMICAL EFFECT
    GONON, P
    DENEUVILLE, A
    GHEERAERT, E
    FONTAINE, F
    DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) : 654 - 657
12345