Absorption coefficient and relative refractive index change for a double δ-doped GaAs MIGFET-like structure: Electric and magnetic field effects

被引：30
作者：
Martinez-Orozco, J. C. [1 ]
Rodriguez-Magdalene, K. A. [1 ,2 ]
Suarez-Lopez, J. R. [1 ]
Duque, C. A. [3 ]
Restrepo, R. L. [4 ]
机构：
[1] Univ Autonoma Zacatecas, Unidad Acad Fis, Calzada Solidaridad Esquina Con Paseo Bufa S-N, Zacatecas 98060, Zac, Mexico
[2] Univ Autonoma Estado Morelos, Inst Invest Ciencias Basicas & Aplicadas, Ctr Invest Ciencias, Ave Univ 1001, Cuernavaca 62209, Morelos, Mexico
[3] UdeA, Fac Ciencias Exactas & Nat, Inst Fis, Grp Mat Condensada UdeA, Calle 70 52-21, Medellin, Colombia
[4] EIA, Medellin, Colombia
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 92卷
关键词：
Absorption coefficient; delta-doping; Relative refractive index change; GaAs; INTERSUBBAND OPTICAL-ABSORPTION; QUANTUM-WELL; EFFECT TRANSISTOR; BARRIER THICKNESS; TRANSITIONS; SEMICONDUCTOR; PERFORMANCE; LINEARITY; RADIATION; MOSFETS;
D O I：
10.1016/j.spmi.2016.02.034
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this work we present theoretical results for the electronic structure as well as for the absorption coefficient and relative refractive index change for an asymmetric double delta-doped like confining potential in the active region of a Multiple Independent Gate Field Effect Transistor (MIGFET) system. We model the potential profile as a double delta-doped like potential profile between two Schottky (parabolic) potential barriers that are just the main characteristics of the MIGFET configuration. We investigate the effect of external electromagnetic fields in this kind of quantum structures, in particular we applied a homogeneous constant electric field in the growth direction z as well as a homogeneous constant magnetic field in the x-direction. In general we conclude that by applying electromagnetic fields we can modulate the resonant peaks of the absorption coefficient as well as their energy position. Also with such probes it is possible to control the nodes and amplitude of the relative refractive index changes related to resonant intersubband optical transitions. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：166 / 173
页数：8
相关论文
共 40 条
[1]   INTERSUBBAND TRANSITIONS IN A DELTA-DOPED SEMICONDUCTOR WITH AN APPLIED ELECTRIC-FIELD - EXACT-SOLUTIONS [J].
AHN, D .
PHYSICAL REVIEW B, 1993, 48 (11) :7981-7985
[2]   INTERSUBBAND OPTICAL-ABSORPTION IN A QUANTUM-WELL WITH AN APPLIED ELECTRIC-FIELD [J].
AHN, D ;
CHUANG, SL .
PHYSICAL REVIEW B, 1987, 35 (08) :4149-4151
[3]  
AHN D, 1987, IEEE J QUANTUM ELECT, V23, P2196
[4]   Excitonic luminescence of SiGe/Si quantum wells δ-doped with boron [J].
Bagaev, V. S. ;
Krivobok, V. S. ;
Nikolaev, S. N. ;
Novikov, A. V. ;
Onishchenko, E. E. ;
Pruchkina, A. A. .
JOURNAL OF APPLIED PHYSICS, 2015, 117 (18)
[5]   TERAHERTZ RADIATION FROM DELTA-DOPED GAAS [J].
BIRKEDAL, D ;
HANSEN, O ;
SORENSEN, CB ;
JARASIUNAS, K ;
BRORSON, SD ;
KEIDING, SR .
APPLIED PHYSICS LETTERS, 1994, 65 (01) :79-81
[6]   Impact of barrier thickness on Analog, RF and Linearity performance of nanoscale DG heterostructure MOSFET [J].
Biswas, Kalyan ;
Sarkar, Angsuman ;
Sarkar, Chandan Kumar .
SUPERLATTICES AND MICROSTRUCTURES, 2015, 86 :95-104
[7]  
Boyd RW, 2008, NONLINEAR OPTICS, 3RD EDITION, P1
[8]   Effect of Si δ-doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure [J].
Dakhlaoui, Hassen ;
Almansour, Shaffa ;
Algrafy, Emane .
SUPERLATTICES AND MICROSTRUCTURES, 2015, 77 :196-208
[9]   Energy band-gap shift with gamma-ray radiation and carbon n-delta-doping in GaAs/AlGaAs QWs structures [J].
Daoudi, M. ;
Hosni, F. ;
Khalifa, N. ;
Dhifallah, I. ;
Farah, K. ;
Hamzaoui, A. H. ;
Ouerghi, A. ;
Chtourou, R. .
PHYSICA B-CONDENSED MATTER, 2014, 440 :113-117
[10]   Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures [J].
Daoudi, M. ;
Dhifallah, I. ;
Ouerghi, A. ;
Chtourou, R. .
SUPERLATTICES AND MICROSTRUCTURES, 2012, 51 (04) :497-505
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