Influence of VI/II ratios on the growth of ZnO thin films on sapphire substrates by low temperature MOCVD

被引：11

作者：

Kong, Bo Hyun ^{[1
]}

Kim, Dong Chan ^{[1
]}

Mohanta, Sanjay Kumar ^{[1
]}

Cho, Hyung Koun ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

Zinc oxide; MOCVD; Thin films; Photoluminescence; X-ray diffraction;

D O I：

10.1016/j.tsf.2009.10.124

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the structural, electrical, and optical properties of ZnO thin films grown at different VI/II ratios on sapphire substrates by metalorganic chemical vapor deposition Transmission electron microscopy and X-ray diffraction revealed the epitaxial nature with a reduced dislocation density of the ZnO films grown at increased VI/II ratios The carrier concentration of the films increased to 4 9 x 10(18) cm(-3) and their resistivity decreased to 1 4 x 10(-1)Omega cm at a VI/II ratio of 513 4 mu mol/min The ZnO films also showed good optical transmittance (>80%) in the visible and near-infrared wavelength regions. The room temperature PL revealed a strong band-edge emission with a weak deep level emission, suggesting the good crystalline quality of the ZnO films on the sapphire substrates Furthermore, the intensity ratio of the band-edge emission to the deep-level emission (I-UV/I-Vis) increased with increasing VI/II ratio (C) 2009 Elsevier B V All rights reserved

引用

页码：2975 / 2979

页数：5

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