Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs-structural intactness with high-temperature annealing

被引：10

作者：

Lee, Y. J. ^{[2
]}

Lee, C. H. ^{[2
]}

Tung, L. T. ^{[2
]}

Chiang, T. H. ^{[2
]}

Lai, T. Y. ^{[2
]}

Kwo, J. ^{[3
]}

Hsu, C-H ^{[1
,4
,5
]}

Hong, M. ^{[2
]}

机构：

[1] Natl Synchrotron Radiat Res Ctr, Div Res, Hsinchu 30076, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30013, Taiwan

[5] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30013, Taiwan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 13期

关键词：

HIGH-KAPPA DIELECTRICS; MOLECULAR-BEAM EPITAXY; INGAAS; MODE; TRANSISTOR; DEVICES; CMOS; GAAS; SI;

D O I：

10.1088/0022-3727/43/13/135101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs has been rapidly thermal annealed to 850 degrees C in N-2. The hetero-structure remained intact, with the In0.20Ga0.80As/GaAs interface being free of misfit dislocation and In0.20Ga0.80As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga2O3(Gd2O3) as a dielectric with an in situ Al2O3 capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 degrees C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology.

引用

页数：4

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