Strain relaxation and surface morphology of ultrathin high ge content SiGe buffers grown on Si(001) substrate

被引：8

作者：

Myronov, Maksym ^{[1
]}

Shiraki, Yasuhiro ^{[1
]}

机构：

[1] Musashi Inst Technol, Adv Res Labs, Res Ctr Silicon Nanosci, Setagaya Ku, Tokyo 1580082, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 02期

关键词：

SiGe; MBE; buffer; strain; roughness;

D O I：

10.1143/JJAP.46.721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth by variable-temperature approach and structural characterization of relaxed, ultra thin 50 nm thick, high Ge content Si0.34Ge0.66 epilayers on Si(001) Substrate is demonstrated. All epilayers are grown in a single process by solid-source molecular beam epitaxy. Smooth surface and full relaxation of Si0.34Ge0.66 epilayers are achieved by introducing initial seeding layer, with high density of point defects, grown at low-temperature followed by the growth at rapidly elevating substrate temperature. Variation of growth temperature of Si0.34Ge0.66 seeding layer from 50 up to 450 degrees C exhibits strong effect on changes of surface morphology and appearance of strain in the Si0.34Ge0.66 epilayers. These epilayers grown under optimum conditions can be used as a buffer layer for the growth of semiconductor heterostructures with high hole mobility compressive strained SiGe or Ge quantum wells.

引用

收藏

页码：721 / 725

页数：5

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