Performance analysis of gamma-ray-irradiated color complementary metal oxide semiconductor digital image sensors

The performance parameters of dark output images captured from color complementary metal oxide semiconductor (CMOS) digital image sensors before and after gamma-ray irradiation were studied. The changes of red, green and blue color parameters of dark output images with different gamma-ray doses and exposure times were analyzed with our computer software. The effect of irradiation on the response of blue color was significantly affected at a lower dose. The dark current density of the sensors increases by three orders at >60krad compared to that of unirradiated sensors. The maximum and minimum analog output voltages all increase with irradiation doses, and are almost the same at >120 krad. The signal to noise ratio is 48 dB before irradiation and 35 dB after irradiation of 180krad. The antiradiation threshold for these sensors is about 100krad. The primary explanation for the changes and the degradation of, device performance parameters is presented.