Research on the Negative Resistance Characteristics of Silicon-based Trench MOS Barrier Schottky Diodes

被引：1
作者：
Chen, Huanwen [1 ]
Wang, Yijun [1 ]
Zhang, Hang [1 ]
机构：
[1] Cent South Univ, Sch Automat, Changsha, Peoples R China
来源：
2020 3RD INTERNATIONAL CONFERENCE ON APPLIED MATHEMATICS, MODELING AND SIMULATION | 2020年 / 1670卷
基金：
中国国家自然科学基金;
关键词：
Negative differential resistance; semiconductor device simulation; trench MOS barrier Schottky diode; RECTIFIER;
D O I：
10.1088/1742-6596/1670/1/012005
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
The negative resistance characteristics of Trench MOS Barrier Schottky (TMBS) diodes were studied by simulation and theoretical calculation. A reasonable simulation model was established according to the experimental results of Schottky Barrier Diodes (SBD), which were utilized to simulate the TMBS diodes. A theoretical calculation model of TMBS diodes under forward bias was constructed based on existing SBD theoretical analysis to systematically understand the simulation results. Both simulation and theoretical calculation demonstrate that the negative resistance characteristics of TMBS diodes under forward bias are caused by the accumulation of minority carriers at the epitaxial region and the accumulation of majority carriers at the epitaxial region and oxide layer.
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页数：9
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