GaN0.011P0.989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates

被引：13

作者：

Xin, HP ^{[1
]}

Welty, RJ ^{[1
]}

Tu, CW ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 08期

关键词：

AlGaInP; double heterostructure; GaNP; GaP; GSMBE; LED;

D O I：

10.1109/68.867974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel red light-emitting diodes (LEDs) based on GaN0.011P0.989-GaP double-heterostructure (DH) directly grown on (100) GaP substrates have been fabricated for the first time. The samples were grown by gas-source molecular beam epitaxy with an RF nitrogen radical beam source to incorporate N in GaP. Compared to conventional GaAs-based AlGaInP red LED's, this novel LED structure eliminates the complicated steps of etching the light-absorption GaAs substrate and wafer-bonding to a transparent GaP substrate. Based on the uncoated devices made with the heterojunction bipolar transistor masks, the emission efficiency of the DH LEDs is 20 times stronger than that of a GaNP pn homojunction diode.

引用

页码：960 / 962

页数：3

共 9 条

[1] Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys [J].

Bellaiche, L ;

Wei, SH ;

Zunger, A .

PHYSICAL REVIEW B, 1997, 56 (16) :10233-10240

[2] Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy [J].

Buyanova, IA ;

Chen, WM ;

Pozina, G ;

Bergman, JP ;

Monemar, B ;

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1999, 75 (04) :501-503

[3] THE GROWTH AND PROPERTIES OF HIGH-PERFORMANCE ALGALNP EMITTERS USING A LATTICE MISMATCHED GAP WINDOW LAYER [J].

FLETCHER, RM ;

KUO, CP ;

OSENTOWSKI, TD ;

HUANG, KH ;

CRAFORD, MG ;

ROBBINS, VM .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (12) :1125-1130

[4] Highly reliable and efficient semiconductor wafer-bonded AlGaInP/GaP light-emitting diodes [J].

Kish, FA ;

Vanderwater, DA ;

DeFevere, DC ;

Steigerwald, DA ;

Hofler, GE ;

Park, KG ;

Steranka, FM .

ELECTRONICS LETTERS, 1996, 32 (02) :132-134

[5]

KISH FA, 1997, HIGH BRIGHTNESS LIGH, P196

[6] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[7] HIGH-EFFICIENCY INGAALP/GAAS VISIBLE LIGHT-EMITTING-DIODES [J].

SUGAWARA, H ;

ISHIKAWA, M ;

HATAKOSHI, G .

APPLIED PHYSICS LETTERS, 1991, 58 (10) :1010-1012

[8] Effects of nitrogen on the band structure of GaNxP1-x alloys [J].

Xin, HP ;

Tu, CW ;

Zhang, Y ;

Mascarenhas, A .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1267-1269

[9]

XIN HP, 2000, GAN0 011P0 089 RED L

← 1 →