GaN MMIC Amplifiers for W-band Transceivers

被引：0

作者：

Masuda, Satoshi ^{[1
]}

Ohki, Toshihiro ^{[1
]}

Makiyama, Kozo ^{[1
]}

Kanamura, Masahito ^{[1
]}

Okamoto, Naoya ^{[1
]}

Shigematsu, Hisao ^{[1
]}

Imanishi, Kenji ^{[1
]}

Kikkawa, Toshihide ^{[1
]}

Joshin, Kazukiyo ^{[1
]}

Hara, Naoki ^{[2
]}

机构：

[1] Fujitsu Ltd, 10-1 Morinosato Wakamiya, Kanagawa 2430197, Japan

[2] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

来源：

2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009) | 2009年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents W-band monolithic microwave integrated circuit (MMIC) amplifiers with grounded coplanar waveguide (GCPW) in 0.12 mu m GaN HEMT technology. A fabricated four-stage low-noise amplifier (LNA) exhibited a record gain of 23 dB at 76.5 GHz and a first reported noise figure (NF) of 3.8 dB at 80 GHz for any W-band GaN MMIC. Another MMIC power amplifier (PA) delivered an output power of 25.4 dBm at 76.5 GHz with continuous wave (CW) operation. To our knowledge, this is the first demonstration of GaN LNA as well as GaN MMICs with GCPW in the W-band. In addition, a practical design technique to prevent instability of the W-band MMIC is described.

引用

页码：443 / +

页数：2

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