Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Defects evolution in silicon during annealing after low energy Si+ implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 603 1) are simulated to verify the models and parameters applied here. The annealing after low energy (5 kev) Si+ implantation is studied by simulation. Although the damage field is only 10 nm under the surface in this case and thus surface annihilation has important impact on defects evolution, the experimental results are reproduced by the simulation. The analysis indicates that the Ostwald ripening can suppress the surface annihilation obviously in the case of low energy implantation. (C) 2004 Elsevier Ltd. All rights reserved.