Infrared reflective property of AZO films prepared by RF magnetron sputtering

被引：12
作者：
Miao, D. G. [1 ]
Jiang, S. X. [1 ]
Shang, S. M. [1 ]
Chen, Z. M. [1 ]
Liu, J. [2 ]
机构：
[1] Hong Kong Polytech Univ, Inst Text & Clothing, Hong Kong, Hong Kong, Peoples R China
[2] Qingdao Univ, Growing Base State Key Lab, Lab New Fiber Mat & Modern Text, Qingdao 266071, Peoples R China
来源：
MATERIALS TECHNOLOGY | 2014年 / 29卷 / 06期
关键词：
RF magnetron sputtering; Thin films; Al doped ZnO; Infrared reflection;
D O I：
10.1179/1753555714Y.0000000158
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al doped ZnO (AZO) films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. Surface morphology, crystal structure, chemical composition, UV-visible transmittance, electrical and infrared properties of the AZO films were investigated by atomic force microscopy, scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Spectrophotometer, Hall measurement system and Fourier Transform infrared spectroscopy, respectively. The results indicate that AZO films with strong c-axis preferred wurtzite structure were successfully prepared by RF magnetron sputtering at room temperature. The average visible transmittance and infrared reflection rate (from 1.5 to 25 mu m) of the deposited films was 84.8 and 30%, respectively. The study creates a sound basis for investigating the infrared properties of AZO films for future heat shielding films.
引用
收藏
页码：321 / 325
页数：5
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