Current-voltage hysteresis and memory effects in ambipolar organic thin film transistors based on a substituted oligothiophene

被引：43
作者：
Cai, Xiuyu
Gerlach, Christopher P.
Frisbie, C. Daniel
机构：
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
[2] 3M Co, Corp Res Mat Lab, St Paul, MN 55144 USA
来源：
JOURNAL OF PHYSICAL CHEMISTRY C | 2007年 / 111卷 / 01期
关键词：
D O I：
10.1021/jp065147c
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An ambipolar 5,5"'-bis(fluoroalkyl) quarterthiophene exhibits memory effects in thin film transistors. The memory effect is based on hysteresis in the transfer (I-D-V-G) characteristics that is apparently due to charge trapping. Hysteresis induced by gate-bias stress was exploited to study nonvolatile floating gate memory effects. The ON state retention time for this memory device is similar to 70 min. The temperature dependence of the retention time revealed a trapping mechanism with a trapping activation energy of similar to 400 meV.
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收藏
页码：452 / 456
页数：5
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