Effects of In0.53Ga0.47As cap layer and stoichiometry of dielectric capping layers on impurity-free vacancy disordering of In0.53Ga0.47As/InP multiquantum well structures

被引：19

作者：

Yu, JS ^{[1
]}

Lee, YT

Lim, H

机构：

[1] Kwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea

[2] Ajou Univ, Dept Mol Sci & Engn, Suwon 442749, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 10期

关键词：

D O I：

10.1063/1.1316789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the influence of the In0.53Ga0.47As cap layer and the stoichiometry of the SiOx and SiNx cap layers on the band gap energy increase, DeltaE(g), induced by the impurity-free vacancy disordering of In0.53Ga0.47As/InP multiquantum well structures. It is found that the magnitude of DeltaE(g) decreases (increases) as the deposited SiOx (SiNx) layer becomes denser. It is also observed that the insertion of the In0.53Ga0.47As cap layer between the dielectric layer and InP barrier layer enhances (does not enhance) DeltaE(g) appreciably in the SiOx (SiNx) capped system. A possible mechanism for these phenomena is discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)06322-2].

引用

页码：5720 / 5723

页数：4

共 15 条

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