Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate-Controlled Switchable Rectifier

被引：44

作者：

Dai, Mingjin ^{[1
]}

Li, Kai ^{[2
]}

Wang, Fakun ^{[3
]}

Hu, Yunxia ^{[1
]}

Zhang, Jia ^{[1
]}

Zhai, Tianyou ^{[3
]}

Yang, Bin ^{[2
]}

Fu, Yongqing ^{[4
,5
]}

Cao, Wenwu ^{[2
]}

Jia, Dechang ^{[1
,6
]}

Zhou, Yu ^{[1
,6
]}

Hu, PingAn ^{[1
,6
]}

机构：

[1] Harbin Inst Technol, MOE Key Lab Microsyst & Microstruct Mfg, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

[2] Harbin Inst Technol, Sch Instrument Sci & Engn, Condensed Matter Sci & Technol Inst, Harbin 150001, Heilongjiang, Peoples R China

[3] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & & Mould Technol, Wuhan 430074, Hubei, Peoples R China

[4] Penn State Univ, Dept Math, University Pk, PA 16802 USA

[5] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[6] Harbin Inst Technol, Key Lab Adv Struct Funct Integrat Mat & Green Mfg, Harbin 150080, Heilongjiang, Peoples R China

来源：

ADVANCED ELECTRONIC MATERIALS | 2020年 / 6卷 / 02期

基金：

中国国家自然科学基金;

关键词：

2D materials; asymmetric contact; dipole coupling; ferroelectrics; gate-tunable diodes; INPLANE; DIODES;

D O I：

10.1002/aelm.201900975

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Miniaturization of device elements, such as ferroelectric diodes, depends on the downscaling of ferroelectric film, which is also crucial for developing high-density information storage technologies of ferroelectric random access memories (FeRAMs). Recently emerged ferroelectric two-dimensional (2D) van der Waals (vdWs) layered materials bring an additional opportunity to further increase the density of FeRAMs. A lateral, switchable rectifier is designed and fabricated based on atomically thin 2D alpha-In2Se3 ferroelectric diodes, thus breaking the thickness limitation of conventional ferroelectric films and achieving an unprecedented level of miniaturization. This is realized through the interrelated coupling between out-of-plane and in-plane dipoles at room temperature; that is, horizontal polarization reversal can be effectively controlled through a vertical electric field. Being further explored as a switchable rectifier, the obtained maximum value of rectification ratio for the alpha-In2Se3 based ferroelectric diode can reach up to 2.5 x 10(3). These results indicate that 2D ferroelectric semiconductors can offer a pathway to develop next-generation multifunctional electronics.

引用

页数：7

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