High intrinsic mobility and ultrafast carrier dynamics in multilayer metal-dichalcogenide MoS2

被引:67
作者
Strait, Jared H. [1 ]
Nene, Parinita [1 ]
Rana, Farhan [1 ]
机构
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14850 USA
关键词
CONDUCTIVITY; TRANSISTORS; TRANSITION; PHOTOLUMINESCENCE; PHOTOCONDUCTIVITY; ABSORPTION; STRAIN;
D O I
10.1103/PhysRevB.90.245402
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by optical-pump terahertz-probe spectroscopy. We find mobilities in this material approaching 4200 cm(2) V-1 s(-1) at low temperatures. The temperature dependence of scattering indicates that the mobility, an order of magnitude larger than previously reported for MoS2, is intrinsically limited by acoustic phonon scattering at THz frequencies. Our measurements of carrier relaxation reveal picosecond cooling times followed by recombination lasting tens of nanoseconds and dominated by Auger scattering into defects. Our results provide a useful context in which to understand and evaluate the performance of MoS2-based electronic and optoelectronic devices.
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页数:9
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