A mmWave Folded Substrate Integrated Waveguide in a 130-nm CMOS Process

被引:29
作者
Mahani, Mohammad Shahidzadeh [1 ]
Roberts, Gordon W. [1 ]
机构
[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 0E9, Canada
关键词
CMOS technology; folded substrate integrated waveguide (FSIW); integrated circuit interconnections; millimeter-wave (mmWave) integrated circuits; TRANSITION; INTERCONNECT; CIRCUITS; COPLANAR; ARRAY; LINE;
D O I
10.1109/TMTT.2017.2661259
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A miniaturized millimeter-wave substrate integrated waveguide (SIW) in IBM 130-nm digital CMOS process is presented in this paper. The footprint of the interconnect is reduced compared with previous works using the folding technique. A current-loop transition structure is proposed in this paper that is built inside the SIW interconnect and excites its TE10 mode with minimal area overhead. A simulation-based comparison of T-FSIW and other planar transmission line structures reveals that the T-FSIW interconnect shows a much higher resonant quality factor. A prototype waveguide is designed and fabricated to operate with a cutoff frequency of 175 GHz. Furthermore, the current-loop excitation is optimized for the frequency range of 180-220 GHz. Simulation and experimental data are used to confirm the proposed interconnect approach.
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页码:2775 / 2788
页数:14
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