Plasma induced substrate damage in high dose implant resist strip process

被引：4

作者：

Chan, BW ^{[1
]}

Perng, BC ^{[1
]}

Sheu, L ^{[1
]}

Chiu, YH ^{[1
]}

Tao, HJ ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Cor, Adv Module Technol Div, Hsinchu 30077, Taiwan

来源：

2003 8TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE | 2003年

关键词：

D O I：

10.1109/PPID.2003.1200919

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this communication we report our work on the ashing of post high dosage implant photoresist removal. Attention was focused on the plasma damage to the substrate silicon, in addition to the hard skin removing capabilities. Inductive coupled plasma (ICP) source was chosen for this study due to its capability of separate control of source and bias power, although our results is directly applicable to the conventional plasma ashing facilities. Electrical data for both NMOS and PMOS device are compared and correlated with the physical substrate damage, and suggestions for a residue-free process with minimum substrate damage was given.

引用

页码：73 / 76

页数：4