Dynamic piezo-phototronic effect in InGaN/GaN multiple quantum wells

被引：7

作者：

Mo, Junsen ^{[1
,2
]}

Hua, Qilin ^{[2
,3
]}

Sha, Wei ^{[2
]}

Yao, Mingyue ^{[1
]}

Wang, Jiangwen ^{[2
]}

Wan, Lingyu ^{[1
]}

Zhai, Junyi ^{[1
,2
,3
]}

Lin, Tao ^{[1
]}

Hu, Weiguo ^{[1
,2
,3
]}

机构：

[1] Guangxi Univ, Ctr Nanoenergy Res, Sch Phys Sci & Technol, Nanning 530004, Peoples R China

[2] Chinese Acad Sci, CAS Ctr Excellence Nanosci, Beijing Inst Nanoenergy & Nanosyst, Beijing Key Lab Micronano Energy & Sensor, Beijing 100083, Peoples R China

[3] Univ Chinese Acad Sci, Sch Nanosci & Technol, Beijing 100049, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2021年 / 155卷

基金：

中国国家自然科学基金;

关键词：

Piezo-phototronic effect; Carrier lifetime; Quantum-confined Stark effect; InGaN; LIGHT-EMITTING DIODES; NITRIDE; EFFICIENCY; EXCITONS; DEVICES;

D O I：

10.1016/j.spmi.2021.106926

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Piezo-phototronic effect in flexible III-nitride optoelectronic devices is of great interest in both enhanced performance and new functionalities. This work studies the carrier dynamics in flexible InGaN/GaN multiple quantum wells under varied external stress regulation. It was observed that photoluminescence (PL) intensity and carrier lifetime varied non-monotonically with increasing external stress obtaining a maximum PL enhancement of similar to 19%. This finding reveals the inherent mechanism of how remaining internal stress determines the optoelectronic performance throughout compensating and over-compensating for the built-in piezoelectric field in InGaN wells and will guide the further device development.

引用

页数：8

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