Dynamic piezo-phototronic effect in InGaN/GaN multiple quantum wells

被引：7
作者：
Mo, Junsen [1 ,2 ]
Hua, Qilin [2 ,3 ]
Sha, Wei [2 ]
Yao, Mingyue [1 ]
Wang, Jiangwen [2 ]
Wan, Lingyu [1 ]
Zhai, Junyi [1 ,2 ,3 ]
Lin, Tao [1 ]
Hu, Weiguo [1 ,2 ,3 ]
机构：
[1] Guangxi Univ, Ctr Nanoenergy Res, Sch Phys Sci & Technol, Nanning 530004, Peoples R China
[2] Chinese Acad Sci, CAS Ctr Excellence Nanosci, Beijing Inst Nanoenergy & Nanosyst, Beijing Key Lab Micronano Energy & Sensor, Beijing 100083, Peoples R China
[3] Univ Chinese Acad Sci, Sch Nanosci & Technol, Beijing 100049, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2021年 / 155卷
基金：
中国国家自然科学基金;
关键词：
Piezo-phototronic effect; Carrier lifetime; Quantum-confined Stark effect; InGaN; LIGHT-EMITTING DIODES; NITRIDE; EFFICIENCY; EXCITONS; DEVICES;
D O I：
10.1016/j.spmi.2021.106926
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Piezo-phototronic effect in flexible III-nitride optoelectronic devices is of great interest in both enhanced performance and new functionalities. This work studies the carrier dynamics in flexible InGaN/GaN multiple quantum wells under varied external stress regulation. It was observed that photoluminescence (PL) intensity and carrier lifetime varied non-monotonically with increasing external stress obtaining a maximum PL enhancement of similar to 19%. This finding reveals the inherent mechanism of how remaining internal stress determines the optoelectronic performance throughout compensating and over-compensating for the built-in piezoelectric field in InGaN wells and will guide the further device development.
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收藏
页数：8
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