Si addition in in situ annealed MgB2 thin films by pulsed laser deposition

被引：8

作者：

Zhao, Y ^{[1
]}

Ionescu, M ^{[1
]}

Horvat, J ^{[1
]}

Li, AH ^{[1
]}

Dou, SX ^{[1
]}

机构：

[1] Univ Wollongong, Inst Supercond & Elect Mat, Wollongong, NSW 2522, Australia

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2004年 / 17卷 / 11期

关键词：

D O I：

10.1088/0953-2048/17/11/004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Various amounts of Si up to a level of 18 wt% were added into MgB2 thin films fabricated by pulsed laser deposition (PLD). Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and an Si target. The precursor films were annealed in situ at 685degreesC for 1 min. Up to an Si level of similar to11 wt%, the superconducting transition temperature (T-c) of the film does not change significantly, as compared to the undoped film. The magnetic critical current density (J(c)) of the film at 5 K was increased by 50% with similar to3.5 wt% Si addition, as compared to the undoped film. The slope of H-irr (T) and H-c2 (T) curves of the 3.5 wt% Si added MgB2 film is slightly higher than that for the undoped film.

引用

页码：1247 / 1252

页数：6

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