Nonlocal orbital-free kinetic energy density functional for semiconductors

被引:145
作者
Huang, Chen [1 ]
Carter, Emily A. [2 ,3 ]
机构
[1] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
[2] Princeton Univ, Dept Mech & Aerosp Engn, Princeton, NJ 08544 USA
[3] Princeton Univ, Program Appl & Computat Math, Princeton, NJ 08544 USA
基金
美国国家科学基金会;
关键词
DIELECTRIC FUNCTION; VACANCY FORMATION; BAND-STRUCTURE; GROUND-STATE; PSEUDOPOTENTIALS; ALUMINUM; APPROXIMATION; SOLIDS; METALS; ATOMS;
D O I
10.1103/PhysRevB.81.045206
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We propose a nonlocal kinetic energy density functional (KEDF) for semiconductors based on the expected asymptotic behavior of its susceptibility function. The KEDF's kernel depends on both the electron density and the reduced density gradient, with an internal parameter formally related to the material's static dielectric constant. We determine the accuracy of the KEDF within orbital-free density functional theory (DFT) by applying it to a variety of common semiconductors. With only two adjustable parameters, the KEDF reproduces quite well the exact noninteracting KEDF (i.e., Kohn-Sham DFT) predictions of bulk moduli, equilibrium volumes, and equilibrium energies. The two parameters in our KEDF are sensitive primarily to changes in the local crystal structure (such as atomic coordination number) and exhibit good transferability between different tetrahedrally-bonded phases. This local crystal structure dependence is rationalized by considering Thomas-Fermi dielectric screening theory.
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页数:15
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