GaN devices for microwave applications

被引：0

作者：

Uren, MJ ^{[1
]}

Barnes, AR ^{[1
]}

Martin, T ^{[1
]}

Balmer, RS ^{[1
]}

Hilton, KP ^{[1
]}

Hayes, DG ^{[1
]}

Kuball, M ^{[1
]}

机构：

[1] QinetiQ Ltd, Malvern Technol Ctr, Malvern WR14 3PS, Worcs, England

来源：

EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN field effect transistors offer spectacular improvements in performance compared to conventional III-V components. In particular they are well suited to applications requiring high levels of output power and are capable of producing RF output power levels approaching 12W/mm of gate periphery with power added efficiency close to theoretical limits. This paper describes the current status of GaN based FETs and discusses circuit functions and system applications that can benefit from this disruptive technology.

引用

页码：111 / 118

页数：8

共 16 条

[1] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Ambacher, O
Foutz, B
Smart, J
Shealy, JR
Weimann, NG
Chu, K
Murphy, M
Sierakowski, AJ
Schaff, WJ
Eastman, LF
Dimitrov, R
Mitchell, A
Stutzmann, M
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 334 - 344
[2] Trapping effects in GaN and SiC microwave FETs
Binari, SC
Klein, PB
Kazior, TE
[J]. PROCEEDINGS OF THE IEEE, 2002, 90 (06) : 1048 - 1058
[3] Undoped AlGaN/GaN HEMTs for microwave power amplification
Eastman, LF
Tilak, V
Smart, J
Green, BM
Chumbes, EM
Dimitrov, R
Kim, H
Ambacher, OS
Weimann, N
Prunty, T
Murphy, M
Schaff, WJ
Shealy, JR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) : 479 - 485
[4] HUSSAIN T, 2001, P INT EL DEV M
[5] Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
Kuball, M
Hayes, JM
Uren, MJ
Martin, T
Birbeck, JCH
Balmer, RS
Hughes, BT
[J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (01) : 7 - 9
[6] KUBALL M, 2002, MAT RES SOC S P FAL
[7] AlGaN/GaN HEMTs on SiC with fT of over 120-GHz
Kumar, V
Lu, W
Schwindt, R
Kuliev, A
Simin, G
Yang, J
Khan, MA
Adesida, I
[J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (08) : 455 - 457
[8] LEIER H, 2001, P GAAS 2001 LOND SEP
[9] PALMOUR JW, 2001, P IEEE INT EL DEV M
[10] PHILLIPS WA, 2001, GAAS 2001 LOND SEPT

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