Semipolar r-plane ZnO films on Si(100) substrates: Thin film epitaxy and optical properties

被引:20
作者
Aggarwal, Ravi [1 ]
Zhou, Honghui [1 ]
Jin, Chunming [2 ]
Narayan, J. [1 ]
Narayan, Roger J. [1 ,2 ]
机构
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[2] Univ N Carolina, Joint Dept Biomed Engn, Chapel Hill, NC 27599 USA
基金
美国国家科学基金会; 美国国家卫生研究院;
关键词
crystal orientation; II-VI semiconductors; photoluminescence; pulsed laser deposition; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; wide band gap semiconductors; X-ray diffraction; zinc compounds; LIGHT-EMITTING-DIODES; PULSED-LASER DEPOSITION; OXYGEN-PRESSURE; GROWTH; PHOTOLUMINESCENCE; ORIENTATION; DEPENDENCE; MECHANISMS; SAPPHIRE; GREEN;
D O I
10.1063/1.3406260
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report heteroepitaxial growth of (10 (1) over bar2) oriented (r-plane) ZnO films on Si(100) substrates. The films were grown by pulsed laser deposition and integration of ZnO with silicon was achieved using a tetragonal yttria stabilized zirconia (YSZ) buffer layer. It was observed that ZnO films grown at temperatures in the range of 700-750 degrees C with relatively high oxygen pressure (similar to 70 mTorr) were (10 (1) over bar2) oriented. ZnO films deposited with lower oxygen pressures were found to be purely (0002) orientated. Experiments carried out to elucidate the role of oxygen pressure indicated that the crystallographic orientation of ZnO depends on the nature of atomic termination of YSZ layer. It has been proposed that crystallographic orientation of ZnO is controlled by chemical free energy associated with ZnO-YSZ interface. Detailed x-ray diffraction and transmission electron microscopy studies showed existence of four types of in-plane domains in r-plane ZnO films. Optical characterization demonstrated that photoluminescence of r-plane ZnO films was superior to that of c-plane ZnO films grown under similar conditions. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3406260]
引用
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页数:6
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共 20 条
  • [11] A comprehensive review of ZnO materials and devices -: art. no. 041301
    Ozgür, U
    Alivov, YI
    Liu, C
    Teke, A
    Reshchikov, MA
    Dogan, S
    Avrutin, V
    Cho, SJ
    Morkoç, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (04) : 1 - 103
  • [12] Demonstration of a semipolar (10(1)over-bar1(3)over-bar) InGaN/GaN green light emitting diode
    Sharma, R
    Pattison, PM
    Masui, H
    Farrell, RM
    Baker, TJ
    Haskell, BA
    Wu, F
    DenBaars, SP
    Speck, JS
    Nakamura, S
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (23) : 1 - 3
  • [13] DOMAIN CONFIGURATIONS DUE TO MULTIPLE MISFIT RELAXATION MECHANISMS IN EPITAXIAL FERROELECTRIC THIN-FILMS .2. EXPERIMENTAL-VERIFICATION AND IMPLICATIONS
    SPECK, JS
    SEIFERT, A
    POMPE, W
    RAMESH, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) : 477 - 483
  • [14] Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells
    Takeuchi, T
    Amano, H
    Akasaki, I
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (2A): : 413 - 416
  • [15] Blue light-emitting diode based on ZnO
    Tsukazaki, A
    Kubota, M
    Ohtomo, A
    Onuma, T
    Ohtani, K
    Ohno, H
    Chichibu, SF
    Kawasaki, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (20-23): : L643 - L645
  • [16] High brightness violet InGaN/GaN light emitting diodes on semipolar (10(1)over-bar(1)over-bar) bulk GaN substrates
    Tyagi, Anurag
    Zhong, Hong
    Fellows, Natalie N.
    Iza, Michael
    Speck, James S.
    DenBaars, Steven P.
    Nakamura, Shuji
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (4-7): : L129 - L131
  • [17] Mechanisms behind green photoluminescence in ZnO phosphor powders
    Vanheusden, K
    Warren, WL
    Seager, CH
    Tallant, DR
    Voigt, JA
    Gnade, BE
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7983 - 7990
  • [18] Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
    Waltereit, P
    Brandt, O
    Trampert, A
    Grahn, HT
    Menniger, J
    Ramsteiner, M
    Reiche, M
    Ploog, KH
    [J]. NATURE, 2000, 406 (6798) : 865 - 868
  • [19] Effects of oxygen pressure on lattice parameter, orientation, surface morphology and deposition rate of (Ba0.02Sr0.98)TiO3 thin films grown on MgO substrate by pulsed laser deposition
    Wang, C
    Cheng, BL
    Wang, SY
    Lu, HB
    Zhou, YL
    Chen, ZH
    Yang, GZ
    [J]. THIN SOLID FILMS, 2005, 485 (1-2) : 82 - 89
  • [20] Thickness and oxygen pressure dependent structural characteristics of BaTiO3 thin films grown by laser molecular beam epitaxy
    Zhao, T
    Chen, F
    Lu, HB
    Yang, GZ
    Chen, ZH
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (10) : 7442 - 7447