Rectifying properties of ZnO thin films deposited on FTO by electrodeposition technique

被引：22

作者：

Lv, Jianguo ^{[1
]}

Sun, Yue ^{[1
]}

Zhao, Min ^{[1
]}

Cao, Li ^{[1
]}

Xu, Jiayuan ^{[1
]}

He, Gang ^{[2
]}

Zhang, Miao ^{[2
]}

Sun, Zhaoqi ^{[2
]}

机构：

[1] Hefei Normal Univ, Sch Elect & Informat Engn, Hefei 230601, Peoples R China

[2] Anhui Univ, Sch Phys & Mat Sci, Hefei 230039, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2016年 / 366卷

基金：

中国国家自然科学基金;

关键词：

ZnO thin films; Electrode position; Photoluminescence; Heterojunction; Rectifying properties; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; RAMAN-SCATTERING; TEMPERATURE; PHOTOLUMINESCENCE; REALIZATION; SUBSTRATE; GROWTH; LAYER;

D O I：

10.1016/j.apsusc.2016.01.104

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO thin films were successfully grown on fluorine-doped tin oxide glass by electrodeposition technique. The crystal structure, surface morphology and optical properties of the thin films were investigated. The average crystallite size and intensity of A(1)(LO) mode increase with improving the absolute value of deposition potential. The best preferential orientation along c-axis and the richest oxygen interstitial defects have been observed in the sample deposited at 0.8 V. A heterojunction device consisting of ZnO thin film and n-type fluorine-doped tin oxide was fabricated. The current-voltage (I-V) characteristic of the p-n heterojunction device deposited at -0.8 V shows the best rectifying diode behavior. The p-type conductivity of the ZnO thin film could be attributed to complex defect of unintentional impurity and interstitial oxygen. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：348 / 352

页数：5

共 50 条

[1] Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles [J].