Temperature and voltage dependence in PZT ferroelectric thin film capacitors

被引：0
|
作者：
Masuda, Y [1 ]
Fujita, S [1 ]
Nishida, T [1 ]
机构：
[1] Hachinohe Inst Technol, Dept Elect Engn, Hachinohe, Aomori 0318501, Japan
来源：
FERROELECTRICS | 1999年 / 232卷 / 1-4期
关键词：
PZT thin film; DE hysteresis; SrRuO3; film;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ferroelectric thin films of Pb(Zr,Ti)O-3 (PZT) are prepared on platinum (Pt) and SrRuO3 (SRO) thin film electrodes by a laser ablation technique. Temperature and voltage dependence of the PZT thin film capacitors are investigated. As the results, it is confirmed that the distribution of the remanent polarization (Pr) and coercive field (Ec) is strongly affected by homogeneity of the grain size of PZT thin film and is estimated by differentiating Pr curves with respect to an applied electric field (dP/dE).
引用
收藏
页码：939 / 944
页数：6
相关论文
共 50 条
  • [41] PZT ferroelectric thin film for uncooled pyroelectric infrared detectors
    Wang Zhong-Hua
    Li Zhen-Hao
    Pu Chao-Guang
    Yang Pei-Zhi
    Lin You-Shen
    JOURNAL OF INORGANIC MATERIALS, 2006, 21 (05) : 1223 - 1229
  • [42] Writing Ferroelectric Nanodomains in PZT Thin Film at Low Temperatures
    Vakulenko, Alexandr
    Andreeva, Natalia
    Vakhrushev, Sergej
    Fotiadi, Alexandr
    Filimonov, Alexey
    Internet of Things, Smart Spaces, and Next Generation Networks and Systems, NEW2AN 2016/uSMART 2016, 2016, 9870 : 708 - 716
  • [43] The electrical properties and retention characteristics of strained PZT thin film capacitors
    Kim, Y
    Lim, W
    Lee, J
    INTEGRATED FERROELECTRICS, 2001, 37 (1-4) : 615 - 624
  • [44] Graded PZT thin film capacitors with stoichimetric variation by MOD technique
    Chen, Z
    Arita, K
    Lim, M
    De Araujo, CAP
    INTEGRATED FERROELECTRICS, 1999, 24 (1-4) : 181 - 188
  • [45] Low-frequency dielectric responses of PZT thin film capacitors
    Lee, SJ
    Kang, KY
    Han, SK
    Jang, MS
    Chae, BG
    Kim, SH
    Yang, YS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 : S1645 - S1648
  • [46] Effect of electrically induced cracks on the properties of PZT thin film capacitors
    Kuentz, Hugo
    Wague, Baba
    Vaxelaire, Nicolas
    Demange, Valerie
    Poulain, Christophe
    Guilloux-Viry, Maryline
    Le Rhun, Gwenael
    APPLIED PHYSICS LETTERS, 2022, 121 (23)
  • [47] Signal form influences on the fatigue Behavior of PZT thin film capacitors
    Braeuhaus, D.
    Schorn, P. J.
    Boettger, U.
    Waser, R.
    2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 2007, : 69 - 71
  • [48] High frequency dielectric properties of thin-film PZT capacitors
    Williamson, W
    Gilbert, BK
    Chen, HD
    Udayakumar, KR
    Cross, LE
    Bozler, CM
    INTEGRATED FERROELECTRICS, 1995, 10 (1-4) : 335 - 342
  • [49] Understanding temperature dependence of threshold voltage in pentacene thin film transistors
    Sun, Qi-Jun
    Gao, Xu
    Wang, Sui-Dong
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (19)
  • [50] Low temperature MOCVD of thin film PZT
    Chen, IS
    Roeder, JF
    FERROELECTRIC THIN FILMS VII, 1999, 541 : 375 - 380
12345