Temperature and voltage dependence in PZT ferroelectric thin film capacitors

被引：0

作者：

Masuda, Y ^{[1
]}

Fujita, S ^{[1
]}

Nishida, T ^{[1
]}

机构：

[1] Hachinohe Inst Technol, Dept Elect Engn, Hachinohe, Aomori 0318501, Japan

来源：

FERROELECTRICS | 1999年 / 232卷 / 1-4期

关键词：

PZT thin film; DE hysteresis; SrRuO3; film;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferroelectric thin films of Pb(Zr,Ti)O-3 (PZT) are prepared on platinum (Pt) and SrRuO3 (SRO) thin film electrodes by a laser ablation technique. Temperature and voltage dependence of the PZT thin film capacitors are investigated. As the results, it is confirmed that the distribution of the remanent polarization (Pr) and coercive field (Ec) is strongly affected by homogeneity of the grain size of PZT thin film and is estimated by differentiating Pr curves with respect to an applied electric field (dP/dE).

引用

页码：939 / 944

页数：6

共 50 条

[21] Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition
Cillessen, JFM
Prins, MWJ
Wolf, RM
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) : 2777 - 2783
[22] Dependence of the interfacial capacitance on measurement regime used for investigation of thin film ferroelectric capacitors
Gregg, J.M. (m.gregg@qub.ac.uk), 1600, American Institute of Physics Inc. (93):
[23] Preparation of ferroelectric PZT thin films by pulsed laser deposition and the dependence of substrate temperature
Luo, Hao
Zheng, Xue-Jun
Zhou, Yi-Chun
Zhongguo Jiguang/Chinese Journal of Lasers, 2001, 28 (06): : 570 - 572
[24] DEPENDENCE OF ADMITTANCE OF TA FILM CAPACITORS ON DC VOLTAGE AT LOW-TEMPERATURE
WYATT, PW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : C85 - C85
[25] Dependence of thermally stimulated current in PZT film capacitors on PZT-electrode interface
Nishida, Takashi
Takeda, Takashi
Uchiyama, Kiyoshi
Shiosaki, Tadashi
FERROELECTRICS, 2007, 357 : 243 - 247
[26] Preparations of PZT thin film capacitors on PtRhOx electrodes with various conducting barriers for high density ferroelectric memories
Lee, KB
Lee, KH
INTEGRATED FERROELECTRICS, 2004, 64 : 305 - 316
[27] Reactive ion etching of Pt/PZT/Pt ferroelectric thin film capacitors in high density DECR plasma
Mace, H
Achard, H
Peccoud, L
MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) : 45 - 48
[28] A time independent model for simulating switching current and hysteresis characteristics of PZT thin-film ferroelectric capacitors
Bartic, TA
Wouters, DJ
Maes, HE
INTEGRATED FERROELECTRICS, 1998, 22 (1-4) : 691 - 701
[29] Reactive ion etching of Pt/PZT/Pt ferroelectric thin film capacitors in high density DECR plasma
LETI , Grenoble, France
Microelectron Eng, 1-4 (45-48):
[30] On the Origin of Cavities in PZT Thin Film and their Influence on Capacitors Reliability
Chentir, M. T.
Ventura, L.
Bouyssou, E.
Anceau, C.
INTEGRATED FERROELECTRICS, 2009, 112 : 88 - 94

← 1 2 3 4 5 →