Temperature and voltage dependence in PZT ferroelectric thin film capacitors

被引：0
|
作者：
Masuda, Y [1 ]
Fujita, S [1 ]
Nishida, T [1 ]
机构：
[1] Hachinohe Inst Technol, Dept Elect Engn, Hachinohe, Aomori 0318501, Japan
来源：
FERROELECTRICS | 1999年 / 232卷 / 1-4期
关键词：
PZT thin film; DE hysteresis; SrRuO3; film;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ferroelectric thin films of Pb(Zr,Ti)O-3 (PZT) are prepared on platinum (Pt) and SrRuO3 (SRO) thin film electrodes by a laser ablation technique. Temperature and voltage dependence of the PZT thin film capacitors are investigated. As the results, it is confirmed that the distribution of the remanent polarization (Pr) and coercive field (Ec) is strongly affected by homogeneity of the grain size of PZT thin film and is estimated by differentiating Pr curves with respect to an applied electric field (dP/dE).
引用
收藏
页码：939 / 944
页数：6
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