Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices

被引：100

作者：

Balatti, Simone ^{[1
,2
]}

Ambrogio, Stefano ^{[3
]}

Carboni, Roberto ^{[3
]}

Milo, Valerio ^{[3
]}

Wang, Zhongqiang ^{[3
]}

Calderoni, Alessandro ^{[4
]}

Ramaswamy, Nirmal ^{[5
]}

Ielmini, Daniele ^{[3
]}

机构：

[1] Italian Univ, Politecn Milano, Nanoelect Team, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Intermol Inc, San Jose, CA 95134 USA

[3] Italian Univ, Nanoelect Team, Politecn Milano, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, Italy

[4] Micron Technol Inc, Emerging Memory Cell Technol Team, Boise, ID 83707 USA

[5] Micron Technol Inc, Boise, ID 83707 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 05期

基金：

欧洲研究理事会;

关键词：

Memory reliability; random number generation (RNG); resistive-switching memory (RRAM); RANDOM-ACCESS-MEMORY; STATISTICAL FLUCTUATIONS; PART I; VARIABILITY;

D O I：

10.1109/TED.2016.2537792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes.

引用

页码：2029 / 2035

页数：7

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