The influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors of type IIb diamond

被引：88

作者：

Blank, V. D. ^{[1
]}

Kuznetsov, M. S. ^{[1
]}

Nosukhin, S. A. ^{[1
]}

Terentiev, S. A. ^{[1
]}

Denisov, V. N. ^{[1
]}

机构：

[1] Technol Inst Superhard & Novel Carbon Mat, Troitsk 142190, Moscow Region, Russia

来源：

关键词：

diamond; boron; temperature gradient; growth sectors;

D O I：

10.1016/j.diamond.2006.12.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Type IIb diamond single crystals of size up to 8 mm were grown using the temperature-gradient method at high static pressure and temperature in Fe-Al-C system with added boron. The influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors has been investigated using optical techniques. Variation from cubo-octahedral to octahedral habit with an increasing added amount of boron has been noted and explained. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：800 / 804

页数：5

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