Formation rate of vacancy-oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiation

被引：2

作者：

Emtsev, V. V. ^{[1
]}

Emtsev, V. V., Jr. ^{[1
]}

Oganesyan, G. A. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2007年 / 18卷 / 07期

关键词：

D O I：

10.1007/s10854-006-9109-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The formation processes of A-centers in Czochralski grown silicon subjected to heat treatment at various temperatures and subsequent (60)Co gamma-irradiation at room temperature are investigated in some detail. The absolute cross-sections of these processes are determined by the presence of one or several competing channels of vacancy trapping by oxygen and other structural defects in heat-treated materials. It is shown that this cross-section can be used for monitoring the effective trapping channels in Cz-Si after short heat treatment when electron microscopy appears to be little or not informative.

引用

页码：701 / 704

页数：4

共 10 条

[1]

BERGHOLZ W, 1985, P 13 INT C DEF SEM, P717

[2] OXYGEN PRECIPITATION IN SILICON [J].

BORGHESI, A ;

PIVAC, B ;

SASSELLA, A ;

STELLA, A .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4169-4244

[3]

DALUDA YN, 1987, SOV PHYS SEMICOND+, V21, P778

[4]

Daluda Yu. N., 1985, Radiation Effects, V89, P173, DOI 10.1080/00337578508222501

[5] New donors in Czochralski grown silicon annealed at T≥ 600°C under compressive stress [J].

Emtsev, VV ;

Andreev, BA ;

Emtsev, VV ;

Oganesyan, GA ;

Kryzhkov, DI ;

Misiuk, A ;

Londos, CA ;

Potsidi, MS .

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 2005, 108-109 :181-186

[6] ON THE A-CENTER FORMATION IN HEAT-TREATED CZ-SILICON [J].

EMTSEV, VV ;

KHRAMTSOV, VA ;

SCHMALZ, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (01) :K15-K18

[7]

Kimerling L. C., 1989, Materials Science Forum, V38-41, P141, DOI 10.4028/www.scientific.net/MSF.38-41.141

[8] EFFECTS OF OXYGEN CLUSTERING AT 600-DEGREES-C ON THE ANNEALING OF A-CENTERS IN CZ SILICON [J].

SCHMALZ, K ;

TITTELBACH, K ;

EMTSEV, VV ;

DALUDA, YN .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 116 (01) :K37-K42

[9]

STEIN HJ, 1971, RAD EFFECTS SEMICOND, P125

[10] PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J].

TEMPELHOFF, K ;

SPIEGELBERG, F ;

GLEICHMANN, R ;

WRUCK, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01) :213-223

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